Samsung is rumoured to reveal its next flagship smartphones, the Samsung Galaxy S7 and Galaxy S7 Edge on 21 February, just before the beginning of the Mobile World Congress 2016. Compared to former release patterns of the Galaxy S smartphones, Samsung is set to release the Galaxy S7 and Galaxy S7 Edge early in 2016. According to rumours, AT&T is already testing both handsets that show that the early release of the handsets is impending.
According to @evleaks, the popular leakster, AT&T is currently testing the Samsung Galaxy S7 and Galaxy S7 Edge with respective model numbers SM-G930A and SM-G935A. Therefore, according to a report by Phone Arena, it is probable that Samsung may release both devices in the US not long after their announcement. The leakster did not announce any details on the specifications of the Samsung Galaxy S7 and S7 Edge devices.
Former rumours indicated that Samsung may reveal the Galaxy S7 in January. On the other hand, another tipster called @Ricciolo1 has announced on Twitter that Samsung will be hosting the Unpacked 2016 event in Barcelona on 21 February. The Mobile World Congress Event will start on the next day – 22 February through 25 February.
Opinions are widespread that the Samsung Galaxy S7 will be available in three variants, namely Snapdragon 820 from Qualcomm, Helio X20 from MediaTek and Exynos 8890 from Samsung. The different chipset variants will be targeted towards different global markets.
Probably, the Samsung Galaxy S7 will come with 3GB of RAM and a 5.2 inch display, and the Samsung Galaxy S7 Edge could feature 4GB of RAM and a dual edge curved display of 5.7 or 5.8 inches. Both devices are predicted to arrive with common features like 20-megapixel cameras, USB Type-C connectors, pressure-sensitive touchscreens and magnesium build.
Samsung, according to G for Games, is also guessed to be working on a supposed flagship called the Samsung Galaxy S7 Premium Edition. Apparently it will feature another variation of the Exynos 8890 chipset that will have 14-core Mali T880 graphics.